*rohs directive 2002/95/ec jan 27 2003 including annex september 1993 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp1xxxf3 overvoltage protector series TISP1072F3,tisp1082f3 dual forward-conducting unidirectional thyristor overvoltage protectors d package (top view) device symbol description these dual forward-conducting unidirectional over-voltage protectors are designed for the overvoltage protection of ics used for the slic (subscriber line interface circuit) function. the ic line driver section is typically powered with 0 v and a negative supply. the tisp1xxxf3 limits voltages that exceed these supply rails and is offered in two voltage variants to match typical negative supply voltage values. high voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. negative tran- sients are initially limited by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. the high crowbar holding current pre- vents d.c. latchup as the current subsides. positive tran- sients are limited by diode forward conduction. these pro- tectors are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. how to order .......................................ul recognized component ion-implanted breakdown region precise and stable voltage low voltage overshoot under surge planar passivated junctions low off-state curr ent <10 a rated for international surge wave shapes 1 2 3 45 6 7 8 g g g g nc t r nc nc - no internal connection g t r sd1xaa terminals t, r and g correspond to the alternative line designators of a, b and c device v drm v v (bo) v ?1072f3 - 58 - 72 ?1082f3 - 66 - 82 waveshape standard i tsp a 2/10 s gr-1089-core 80 8/20 s iec 61000-4-5 70 10/160 s fcc part 68 60 10/700 s itu-t k.20/21 fcc part 68 50 10/560 s fcc part 68 45 10/1000 s gr-1089-core 35 device package carrier tisp1xxxf3 d, small-outline tape and reeled tisp1xxxf3dr-s insert xxx value corresponding to protection voltages of 072 and 082 order as *rohs compliant
september 1993 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp1xxxf3 overvoltage protector series description (continued) high voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. negative transients are initially limited by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. the high crow bar holding current helps prevent d.c. latchup as the current subsides. positive transients are limited by diode forward conduction. these pro tectors are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. these monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover c ontrol and are virtually transparent to the system in normal operation. absolute maximum ratings, t a = 25 c (unless otherwise noted) electrical characteristics for r and t terminal pair, t a = 25 c (unless otherwise noted) rating symbol value unit repetitive peak off-state voltage, 0 c < t a < 70 c ?1072f3 ?1082f3 v drm -58 -66 v non-repetitive peak on-state pulse current (see notes 1 and 2) i ppsm a 1/2 (gas tube differential transient, 1/2 voltage wave shape) 120 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 80 1/20 (itu-t k.22, 1.2/50 voltage wave shape, 25 ? resistor) 50 8/20 (iec 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 70 10/160 (fcc part 68, 10/160 voltage wave shape) 60 4/250 (itu-t k.20/21, 10/700 voltage wave shape, simultaneous) 55 0.2/310 (cnet i 31-24, 0.5/700 voltage wave shape) 38 5/310 (itu-t k.20/21, 10/700 voltage wave shape, single) 50 5/320 (fcc part 68, 9/720 voltage wave shape, single) 50 10/560 (fcc part 68, 10/560 voltage wave shape) 45 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 35 non-repetitive peak on-state current, 0 c < t a < 70 c (see notes 1 and 3) 50 hz, 1 s i tsm 4.3 a initial rate of rise of on-state current, linear current ramp, maximum ramp value < 38 a di t /dt 250 a/ s junction temperature t j -65 to +150 c storage temperature range t stg -65 to +150 c notes: 1. further details on surge wave shapes are contained in the applications information section. 2. initially the tisp ? must be in thermal equilibrium with 0 c < t j <70 c. the surge may be repeated after the tisp ? returns to its initial conditions. 3. above 70 c, derate linearly to zero at 150 c lead temperature. parameter test conditions min typ max unit i drm repetitive peak off- state current v d = v drm , 0 c september 1993 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp1xxxf3 overvoltage protector series thermal characteristics electrical characteristics for t and g or r and g terminals, t a = 25 c (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off- state current v d =v drm , 0 c september 1993 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp1xxxf3 overvoltage protector series parameter measurement information figure 1. voltage-current characteristic for terminals r and g or t and g -v i (br) v (br) v (br)m v drm i drm v d i h i t v t i tsm i tsp v (bo) i (bo) i d quadrant i forward conduction characteristic +v +i i f v f i tsm i tsp -i quadrant iii switching characteristic pmxxac figure 2. voltage-current characteristic for terminals r and t -v i (br) v (br) v (br)m v drm i drm v d i h i t v t i tsm i tsp v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) i (br) v (br) v (br)m v drm i drm v d i d i h i t v t i tsm i tsp -i quadrant iii switching characteristic pmxxaa
september 1993 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical characteristics - r and g or t and g terminals figure 3. figure 4. figure 5. figure 6. t j - junction temperature - c -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 tc1laf v d = -50 v t j - junction temperature - c -25 0 25 50 75 100 125 150 negative breakdown voltages - v 60.0 70.0 80.0 tc1lal v (bo) v (br) v (br) v (bo) v (br)m v (br)m i (br) = 1 ma '1072f3 '1082f3 v t - on-state voltage - v 23456789 1 0 1 10 100 tc1lac 25 c -40 c 150 c v f - forward voltage - v 23456789 110 i f - forward current - a 1 10 100 tc1lae off-state current vs junction temperature off-state current vs on-state voltage forward current vs forward voltage breakdown voltages vs junction temperature 1 25 c 40 c 150 c tisp1xxxf3 overvoltage protector series
september 1993 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp1xxxf3 overvoltage protector series typical characteristics - r and g or t and g terminals figure 7. figure 8. figure 9. figure 10. t j - junction temperature - c -25 0 25 50 75 100 125 150 i h , i (bo) - holding current, breakover current - a 0.07 0.08 0.09 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 tc1lad i (bo) i h di/dt - rate of rise of principle current - a/ s 0.001 0.01 0.1 1 10 100 normalized breakover voltage 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 tc1lag di/dt - rate of rise of principle current - a/ s 0.001 0.01 0.1 1 10 100 v frm - peak forward recovery voltage - v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 tc1lah r or t terminal voltage (negative) - v 01 1 10 off-state capacitance - pf 10 100 tc1laj 50 '1072f3 '1082f3 200 third terminal = 0 to -50 v holding current & breakover current vs junction temperature peak forward recovery voltage vs rate of rise of principle current off-state capacitance vs r or t terminal voltage (negative) normalized breakover voltage vs rate of rise of principle current
september 1993 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical characteristics - r and g or t and g terminals figure 11. figure 12. figure 13. r or t terminal voltage (positive) - v 0.01 0.1 off-state capacitance - pf 150 200 100 tc1lak 0.3 '1072f3 '1082f3 third terminal = 0 to -50 v t j - junction temperature - c -25 0 25 50 75 100 125 150 off-state capacitance - pf 10 100 tc1lab 500 terminal bias = 0 terminal bias = -50 v '1072f3 '1082f3 '1072f3 '1082f3 third terminal = 0 to -50 v decay time - s 10 100 1000 maximum surge current - a 10 100 1000 tc1laa 2 off-state capacitance vs r or t terminal voltage (positive) off-state capacitance vs junction temperature surge current vs decay time tisp1xxxf3 overvoltage protector series
september 1993 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp1xxxf3 overvoltage protector series typical characteristics - r and t terminals figure 14. figure 15. figure 16. figure 17. t j - junction temperature - c t j - junction temperature - c t j - junction temperature - c -25 0 25 50 75 100 125 150 i d - off-state current - a 0.001 0.01 0.1 1 10 100 tc1lan v d = 50 v -25 0 25 50 75 100 125 150 breakdown voltages - v 60.0 70.0 80.0 90.0 tc1lam i (br) = 1 ma '1072f3 '1082f3 v (br) v (bo) v (br)m v (bo) v (br) v (br)m -25 0 25 50 75 100 125 150 i h , i (bo) - holding current, breakover current - a 0.07 0.08 0.09 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 tc1lao i (bo) i h di/dt - rate of rise of principle current - a/ s 0.001 0.01 0.1 1 10 100 normalized breakover voltage 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 tc1lai off-state current vs junction temperature holding current & breakover current vs junction temperature normalized breakover voltage vs rate of rise of principle current breakdown voltages vs junction temperature
september 1993 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp1xxxf3 overvoltage protector series thermal information maximum non-recurring 50 hz current t - current duration - s 01 1 10 100 1000 i trms - maximum non-recurrent 50 hz current - a 1 10 vs current duration ti1laaa v gen = 250 vrms r gen = 10 to 150 ? figure 18. thermal response t - power pulse duration - s figure 19. 00001 0001 001 01 1 10 100 1000 z ja - transient thermal impedance - c/w 1 10 100 ti1maaa
september 1993 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp1xxxf3 overvoltage protector series applications information electrical characteristics the electrical characteristics of a tisp device are strongly dependent on junction temperature, t j . hence, a characteristic value will depend on the junction temperature at the instant of measurement. the values given in this data sheet were measured on commerci al testers, which generally minimize the temperature rise caused by testing. application values may be calculated from the paramet ers? temperature coefficient, the power dissipated and the thermal response curve, z (see m. j. maytum, ?transient suppressor dynamic parameters.? ti technical journal, vol. 6, no. 4, pp.63-70, july-august 1989). lightning surge wave shape notation most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an exponential decay. wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50 % of the maximum amplitude. the notation used for the wave shape is amplitude, rise time/decay time . a 50 a, 5/310 s wave shape would have a peak current value of 50 a, a rise time of 5 s and a decay time of 310 s. the tisp surge current graph comprehends the wave shapes of commonly used surges. generators there are three categories of surge generator types, single wave shape, combination wave shape and circuit defined. single wave shape generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g. 10/1000 s o pen cir- cuit voltage and short circuit current). combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current (e.g. 1.2/50 s open circuit voltage and 8/20 s short circuit current). circuit specified generators usually equate to a combination generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 s o pen cir- cuit voltage generator typically produces a 5/310 s short circuit current). if the combination or circuit defined generators o perate into a finite resistance, the wave shape produced is intermediate between the open circuit and short circuit values. current rating when the tisp device switches into the on-state it has a very low impedance. as a result, although the surge wave shape may be defined in terms of open circuit voltage, it is the current wave shape that must be used to assess the required tisp surge capability. as an example, the itu-t k.21 1.5 kv, 10/700 s open circuit voltage surge is changed to a 38 a, 5/310 s current waveshape whe n driving into a short circuit. thus, the tisp surge current capability, when directly connected to the generator, will be found for the itu- t k.21 waveform at 310 s on the surge graph and not 700 s. some common short circuit equivalents are tabulated below: any series resistance in the protected equipment will reduce the peak circuit current to less than the generators? short circui t value. a 1 kv open circuit voltage, 100 a short circuit current generator has an effective output impedance of 10 ? (1000/100). if the equipment has a series resistance of 25 ? then the surge current requirement of the tisp device becomes 29 a (1000/35) and not 100 a. standard open circuit voltage short circuit current itu-t k.21 1.5 kv, 10/700 s 37.5 a, 5/310 s itu-t k.20 1 kv, 10/700 s 25 a, 5/310 s iec 61000-4-5, combination wave generator 1.0 kv, 1.2/50 s 500 a, 8/20 s telcordia gr-1089-core 1.0 kv, 10/1000 s 100 a, 10/1000 s telcordia gr-1089-core 2.5 kv, 2/10 s 500 a, 2/10 s fcc part 68, type a 1.5 kv, <10/>160 s 200 a,<10/>160 s fcc part 68, type a 800 v, <10/>560 s 100 a,<10/>160 s fcc part 68, type b 1.5 kv, 9/720 s 37.5 a, 5/320 s
september 1993 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp1xxxf3 overvoltage protector series applications information protection voltage the protection voltage, (v (bo) ), increases under lightning surge conditions due to thyristor regeneration. this increase is dependent on the rate of current rise, di/dt, when the tisp device is clamping the voltage in its breakdown region. the v (bo) value under surge condi- tions can be estimated by multiplying the 50 hz rate v (bo) (250 v/ms) value by the normalized increase at the surge?s di/dt (figure 8.). an estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance. as an example, the itu-t k.21 1.5 kv, 10/700 s surge has an average dv/dt of 150 v/s, but, as the rise is exponential, the in itial dv/dt is higher, being in the region of 450 v/s. the instantaneous generator output resistance is 25 ? . if the equipment has an additional series resistance of 20 ? , the total series resistance becomes 45 ? . the maximum di/dt then can be estimated as 450/45 = 10 a/s. in practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resist ance of the tisp device breakdown region. capacitance off-state capacitance the off-state capacitance of a tisp device is sensitive to junction temperature, t j , and the bias voltage, comprising of the d.c. volt- age, v d , and the a.c. voltage, v d . all the capacitance values in this data sheet are measured with an a.c. voltage of 100 mv. the typical 25 c variation of capacitance value with a.c. bias is shown in figure 21. when v d >> v d , the capacitance value is independent on the value of v d . the capacitance is essentially constant over the range of normal telecommunication frequencies. figure 20. v d - rms ac test voltage - mv 1 10 100 1000 normalized capacitance 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 aixxaa normalized to v d = 100 mv dc bias, v d = 0 normalized capacitance vs rms ac test voltage
september 1993 - revised september 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp1xxxf3 overvoltage protector series applications information longitudinal balance figure 21 shows a three terminal tisp device with its equivalent ?delta? capacitance. each capacitance, c tg , c rg and c tr , is the true terminal pair capacitance measured with a three terminal or guarded capacitance bridge. if wire r is biased at a larger potenti al than wire t, then c tg >c rg . capacitance c tg is equivalent to a capacitance of c rg in parallel with the capacitive difference of (c tg -c rg ). the line capacitive unbalance is due to (c tg -c rg ) and the capacitance shunting the line is c tr +c rg /2. all capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitiv e unbalance effects. simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitan ce via the third terminal is included. figure 21. c tg c rg c tr equipment t r g (c tg -c rg ) c rg c tr equipment t r g c rg c tg > c rg equivalent unbalance aixxab ?isp?is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. ?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries.
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